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2SD1634 - NPN Transistor

Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min) High DC Current Gain : hFE= 1500(Min) @IC= 5A High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for power switching applications.

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Datasheet Details

Part number 2SD1634
Manufacturer INCHANGE
File Size 212.53 KB
Description NPN Transistor
Datasheet download datasheet 2SD1634 Datasheet
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Full PDF Text Transcription

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isc Silicon NPN Darlington Power Transistor 2SD1634 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min) ·High DC Current Gain : hFE= 1500(Min) @IC= 5A ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 8 A ICP Collector Current-Peak 12 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.5 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.
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