Datasheet Details
| Part number | 2SD1647 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 199.41 KB |
| Description | NPN Transistor |
| Download | 2SD1647 Download (PDF) |
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| Part number | 2SD1647 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 199.41 KB |
| Description | NPN Transistor |
| Download | 2SD1647 Download (PDF) |
|
|
|
·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC= 1A ·High DC Current Gain : hFE= 1000(Min) @IC= 1.0A ·Low Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low frequency power Amp applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50-70 V VCEO Collector-Emitter Voltage 50-70 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 2 A ICP Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 3 A 25 W 150 ℃ -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1647 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 5mA, IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 100μA, IE= 0 MIN TYP.
MAX UNIT 50 70 V 50 70 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1A, IB= 1mA 1.5 V ICBO Collector Cutoff Current VCB= 50V, IE= 0 10 uA ICEO Collector Cutoff Current VCE= 50V, IB= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 5V;
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD1647 | NPN Silicon Transistor | Rohm |
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