Datasheet Details
| Part number | 2SD1678 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 190.50 KB |
| Description | NPN Transistor |
| Download | 2SD1678 Download (PDF) |
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| Part number | 2SD1678 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 190.50 KB |
| Description | NPN Transistor |
| Download | 2SD1678 Download (PDF) |
|
|
|
·High DC Current Gain-hFE= 750(Min)@ IC= 15A ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications ABSOLUTE MAXIMUM RATINGS (T aB B =25 ℃) SYMBOL PARAMETER VALUE UNIT VCER Collector-Emitter Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.5 A 3.5 W 100 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1678 ELECTRICAL CHARACTERISTICS TBCB=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA, RBE= ∞ V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA, RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA ,IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 8A , IB= 16mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 15A , IB= 150mA VBE(sat)-1 Base-Emitter Saturation Voltage IC= 8A , IB= 16mA VBE(sat)-2 Base-Emitter Saturation Voltage IC= 15A , IB= 150mA ICBO Collector Cutoff current VCB= 100V, IE= 0 ICEO Collector Cutoff current VCE= 100V, RBE= ∞ IEBO Emitter Cutoff Current VEB= 5V;
IC=0 hFE-1 DC Current Gain IC= 8A ;
VCE= 3V hFE-2 DC Current Gain IC= 15A ;
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor.
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