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2SD1789 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

General Description

·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 200V (Min.) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier and low speed high current switching industrial use.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEO Collector-Emitter Voltage 200 V VCBO Collector-Base Voltage 200 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continunous 4 A ICM Collector Current-Peak 6 A IB Base Current-Continunous 0.3 A IBM Base Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 0.5 A 25 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 5.0 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SD1789 MIN TYP.

MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA;

Overview

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor.