Datasheet Details
| Part number | 2SD1790 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 197.10 KB |
| Description | NPN Transistor |
| Datasheet |
 2SD1790 Datasheet
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| Part number | 2SD1790 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 197.10 KB |
| Description | NPN Transistor |
| Datasheet |
2SD1790 Datasheet
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·Low Collector Saturation Voltage ·High DC Current Gain ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier and low speed high current switching industrial use.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEO Collector-Emitter Voltage 50-70 V VCBO Collector-Base Voltage 50-70 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continunous 4 A ICM Collector Current-Peak 6 A IB Base Current-Continunous 0.3 A IBM Base Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 0.5 A 25 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 5.0 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1790 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 1A;
IB= 2mA VBE(sat) Base-Emitter Saturation Voltage IC= 1A;
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SD1790 | Darlington Transistor | Shindengen Electric Mfg.Co.Ltd |
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|---|---|
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