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2SD1791 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

General Description

·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V (Min.) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier and low speed high current switching industrial use.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEO Collector-Emitter Voltage 100 V VCBO Collector-Base Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continunous 7 A ICM Collector Current-Peak 10 A IB Base Current-Continunous 0.5 A IBM Base Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 1.0 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 4.17 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1791 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 3A;

IB= 5mA VBE(sat) Base-Emitter Saturation Voltage IC= 3A;

Overview

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor.