Datasheet Details
| Part number | 2SD1793 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 196.66 KB |
| Description | NPN Transistor |
| Download | 2SD1793 Download (PDF) |
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| Part number | 2SD1793 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 196.66 KB |
| Description | NPN Transistor |
| Download | 2SD1793 Download (PDF) |
|
|
|
·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V (Min.) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier and low speed high current switching industrial use.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEO Collector-Emitter Voltage 100 V VCBO Collector-Base Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continunous 10 A ICM Collector Current-Peak 15 A IB Base Current-Continunous 0.5 A IBM Base Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 1.0 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.5 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1793 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 5A;
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SD1793 | Darlington Transistor | Shindengen Electric Mfg.Co.Ltd |
| Part Number | Description |
|---|---|
| 2SD1790 | NPN Transistor |
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| 2SD1705 | NPN Transistor |
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| 2SD1712 | NPN Transistor |
| 2SD1715 | NPN Transistor |
| 2SD1717 | NPN Transistor |
| 2SD1718 | NPN Transistor |
| 2SD1729 | NPN Transistor |