2SD1804 Overview
·Excellent linearity of hFE ·Low Collector-Emitter Breakdown Voltage- : 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1804 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC=4A; IB=0.2A VBE(sat) Base-Emitter Saturation Voltage IC= 4A;.

