Datasheet Details
| Part number | 2SD1815 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 224.14 KB |
| Description | NPN Transistor |
| Download | 2SD1815 Download (PDF) |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1815.
| Part number | 2SD1815 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 224.14 KB |
| Description | NPN Transistor |
| Download | 2SD1815 Download (PDF) |
|
|
|
·Excellent linearity of hFE ·Small and slim package making it easy to make 2SD1815/2SB1215-used set smaller ·Low collector-to-emitter saturation voltage ·High fT ·Fast switching speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Relay drivers,High speed inverters,converters and other general high-current switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 3 A ICP Collector Current-Pulse Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 6 A 20 W 1.0 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1815 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A;
IB= 150mA VBE(sat) Base-Emitter Saturation Voltage IC= 1.5A;
IB= 150mA V(BR)CBO Collector-Base Breakdown Voltage IC= 10uA;
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2SD1815 | NPN Transistor | JCET |
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