2SD1815 Description
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1815 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 150mA VBE(sat) Base-Emitter Saturation Voltage IC= 1.5A; IB= 150mA V(BR)CBO Collector-Base Breakdown Voltage IC= 10uA;.