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2SD1828 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

General Description

·High DC Current Gain- : hFE= 1500(Min)@ (VCE= 3V, IC= 1.5A) ·Large Current Capability and Wide ASO.

·Complement to Type 2SB1226 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in motor drivers, printer hammer drivers, relay drivers,and constant-voltage regulators.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 110 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature 5 A 2 W 20 150 ℃ -55~150 ℃ isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1828 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.

Overview

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor.