2SD1845 transistor equivalent, silicon npn power transistor.
*Designed for horizontal deflection output applications .
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALU.
*Collector-Base Breakdown Voltage-
: VCBO= 1300V (Min.)
*High Switching Speed
*Built-in Damper Diode
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed for horizontal deflec.
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