Datasheet Details
| Part number | 2SD1856 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 184.58 KB |
| Description | NPN Transistor |
| Download | 2SD1856 Download (PDF) |
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| Part number | 2SD1856 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 184.58 KB |
| Description | NPN Transistor |
| Download | 2SD1856 Download (PDF) |
|
|
|
·High DC Current Gain : hFE= 2000(Min) @IC= 2A ·Low Collector Saturation Voltgae- : VCE(sat)= 1.5V(Max.)@ IC= 2A ·Bullt-in damper diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed forr Motor，Relay and Solenoid driver applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50-70 V VCEO Collector-Emitter Voltage 50-70 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 5 A ICP Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 10 A 2 W 25 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1856 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA;
IB= 0 MIN TYP.
MAX UNIT 50 70 V V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA;
isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SD1856.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD1856 | Medium Power Transistor | Rohm |
| Part Number | Description |
|---|---|
| 2SD1855 | NPN Transistor |
| 2SD1803 | TO-252 NPN Transistor |
| 2SD1804 | NPN Transistor |
| 2SD1804-T | NPN Transistor |
| 2SD1804L-T | NPN Transistor |
| 2SD1815 | NPN Transistor |
| 2SD1816L | Silicon NPN Power Transistor |
| 2SD1817 | NPN Transistor |
| 2SD1825 | NPN Transistor |
| 2SD1826 | NPN Transistor |