Datasheet Details
| Part number | 2SD1890 |
|---|---|
| Manufacturer | INCHANGE |
| File Size | 187.55 KB |
| Description | NPN Transistor |
| Datasheet |
 2SD1890-INCHANGE.pdf
|
| Part number | 2SD1890 |
|---|---|
| Manufacturer | INCHANGE |
| File Size | 187.55 KB |
| Description | NPN Transistor |
| Datasheet |
2SD1890-INCHANGE.pdf
|
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) High DC Current Gain : hFE= 5000(Min) @IC= 2A Low Collector Saturation Voltgae- : VCE(sat)= 2.5V(Max.)@ IC= 2A Complement to Type 2SB1250 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For power amplification ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Em
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