Datasheet Details
| Part number | 2SD1891 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 187.69 KB |
| Description | NPN Transistor |
| Download | 2SD1891 Download (PDF) |
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| Part number | 2SD1891 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 187.69 KB |
| Description | NPN Transistor |
| Download | 2SD1891 Download (PDF) |
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 90V(Min) ·High DC Current Gain : hFE= 5000(Min) @IC= 3A ·Low Collector Saturation Voltgae- : VCE(sat)= 3.0V(Max.)@ IC= 3A ·Complement to Type 2SB1251 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For power amplification ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 110 V VCEO Collector-Emitter Voltage 90 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICP Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 7 A 2 W 40 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1891 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;
IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A;
isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SD1891.
| Part Number | Description |
|---|---|
| 2SD1890 | NPN Transistor |
| 2SD1892 | NPN Transistor |
| 2SD1893 | NPN Transistor |
| 2SD1894 | NPN Transistor |
| 2SD1895 | NPN Transistor |
| 2SD1897 | NPN Transistor |
| 2SD1899-K | NPN Transistor |
| 2SD1803 | TO-252 NPN Transistor |
| 2SD1804 | NPN Transistor |
| 2SD1804-T | NPN Transistor |