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2SD1892 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

General Description

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High DC Current Gain : hFE= 5000(Min) @IC= 4A ·Low Collector Saturation Voltgae- : VCE(sat)= 2.5V(Max.)@ IC= 4A ·Complement to Type 2SB1252 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For power amplification ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A ICP Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 8 A 2 W 45 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1892 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA;

IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;

IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A;

Overview

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor.