Datasheet Details
| Part number | 2SD1923 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 198.12 KB |
| Description | NPN Transistor |
| Datasheet |
 2SD1923 Datasheet
|
|
|
| Part number | 2SD1923 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 198.12 KB |
| Description | NPN Transistor |
| Datasheet |
2SD1923 Datasheet
|
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A ·High DC Current Gain : hFE= 2000(Min) @ IC= 2A, VCE= 3V ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed of driver of solenoid, relay and motor, series regulator and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 4 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.5 A 25 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SD1923 MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ;
IB= 0 80 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A;
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor.
| Part Number | Description |
|---|---|
| 2SD1910 | NPN Transistor |
| 2SD1911 | NPN Transistor |
| 2SD1913 | NPN Transistor |
| 2SD1933 | NPN Transistor |
| 2SD1940 | NPN Transistor |
| 2SD1941 | NPN Transistor |
| 2SD1958 | NPN Transistor |
| 2SD1959 | NPN Transistor |
| 2SD1966 | NPN Transistor |
| 2SD1975 | NPN Transistor |