Datasheet Details
| Part number | 2SD1959 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 186.96 KB |
| Description | NPN Transistor |
| Download | 2SD1959 Download (PDF) |
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| Part number | 2SD1959 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 186.96 KB |
| Description | NPN Transistor |
| Download | 2SD1959 Download (PDF) |
|
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|
·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 650V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV receivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICM IB IBM PC TJ Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current- Continuous Collector Current-Peak Base Current- Continuous Base Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature 1400 V 650 V 6 V 10 A 20 A 5 A 8 A 50 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc Product Specification 2SD1959 SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.8 ℃/W isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor isc Product Specification 2SD1959 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ;
IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA;
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