Datasheet Details
| Part number | 2SD1966 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 177.41 KB |
| Description | NPN Transistor |
| Datasheet |
 2SD1966 Datasheet
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| Part number | 2SD1966 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 177.41 KB |
| Description | NPN Transistor |
| Datasheet |
2SD1966 Datasheet
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·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 0.7 A ICP Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1.5 A 5 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 100μA ;
IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ;
RBE= ∞ V(BR)EBO Emitter-Base Breakdown Vltage IE= 100μA ;
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1966.
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