Datasheet Details
| Part number | 2SD1976 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 185.55 KB |
| Description | NPN Transistor |
| Download | 2SD1976 Download (PDF) |
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| Part number | 2SD1976 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 185.55 KB |
| Description | NPN Transistor |
| Download | 2SD1976 Download (PDF) |
|
|
|
·Fast Switching Speed ·High DC Current Gain ·Built-in high voltage zener diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High voltage switching ·Igniter ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 6 A 10 A 40 W 150 ℃ -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1976 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA;
IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA;
RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA;
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD1976 | Silicon NPN Transistor | Hitachi Semiconductor |
| Part Number | Description |
|---|---|
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