2SD1982 Description
·Collector-Emitter Breakdown Voltage- : 1 isc & iscsemi is registered trademark NCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1982 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;.