Datasheet Details
| Part number | 2SD1982 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 185.08 KB |
| Description | NPN Transistor |
| Download | 2SD1982 Download (PDF) |
|
|
| Part number | 2SD1982 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 185.08 KB |
| Description | NPN Transistor |
| Download | 2SD1982 Download (PDF) |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·Low Collector Saturation Voltage ·High DC Current Gain ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulator ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 6 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark NCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1982 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC=1mA;
isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SD1982.
| Part Number | Description |
|---|---|
| 2SD198 | NPN Transistor |
| 2SD1983 | NPN Transistor |
| 2SD1985 | NPN Transistor |
| 2SD1985A | NPN Transistor |
| 2SD1986 | NPN Transistor |
| 2SD1987 | NPN Transistor |
| 2SD1988 | NPN Transistor |
| 2SD1910 | NPN Transistor |
| 2SD1911 | NPN Transistor |
| 2SD1913 | NPN Transistor |