Datasheet Details
| Part number | 2SD1983 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 184.95 KB |
| Description | NPN Transistor |
| Download | 2SD1983 Download (PDF) |
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| Part number | 2SD1983 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 184.95 KB |
| Description | NPN Transistor |
| Download | 2SD1983 Download (PDF) |
|
|
|
·High DC Current Gain : hFE= 4000(Min) @IC= 1A ·Low Collector Saturation Voltgae- : VCE(sat)= 1.5V(Max.)@ IC= 1A ·Incorporating a built-in zener diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For low-frequency amplification ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50-70 V VCEO Collector-Emitter Voltage 50-70 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.5 A ICP Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 2.5 A 2 W 20 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1983 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC=0.1mA;
IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1A;
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor.
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|---|---|
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