Datasheet Details
| Part number | 2SD1986 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 181.42 KB |
| Description | NPN Transistor |
| Download | 2SD1986 Download (PDF) |
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|
| Part number | 2SD1986 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 181.42 KB |
| Description | NPN Transistor |
| Download | 2SD1986 Download (PDF) |
|
|
|
·High DC Current Gain- : hFE = 1000(Min)@ IC= 2A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 60V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC= 3A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications.
·Hammer drive, pulse motor drive applications.
·Power amplifier applications.
isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SD1986.
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|---|---|
| 2SD198 | NPN Transistor |
| 2SD1982 | NPN Transistor |
| 2SD1983 | NPN Transistor |
| 2SD1985 | NPN Transistor |
| 2SD1985A | NPN Transistor |
| 2SD1987 | NPN Transistor |
| 2SD1988 | NPN Transistor |
| 2SD1910 | NPN Transistor |
| 2SD1911 | NPN Transistor |
| 2SD1913 | NPN Transistor |