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2SD1986 Datasheet - INCHANGE

NPN Transistor

2SD1986 General Description

*High DC Current Gain- : hFE = 1000(Min)@ IC= 2A *Collector-Emitter Breakdown Voltage- : V(BR)CEO = 60V(Min) *Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC= 3A *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS .

2SD1986 Datasheet (181.42 KB)

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Datasheet Details

Part number:

2SD1986

Manufacturer:

INCHANGE

File Size:

181.42 KB

Description:

Npn transistor.

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2SD1986 NPN Transistor INCHANGE

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