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2SD1987 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

General Description

·High DC Current Gain- : hFE = 1000(Min)@ IC= 2A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 60V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC= 3A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications.

·Hammer drive, pulse motor drive applications.

·Power amplifier applications.

Overview

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor.