Datasheet Details
| Part number | 2SD1988 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 183.76 KB |
| Description | NPN Transistor |
| Datasheet |
 2SD1988 Datasheet
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| Part number | 2SD1988 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 183.76 KB |
| Description | NPN Transistor |
| Datasheet |
2SD1988 Datasheet
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·High DC Current Gain- : hFE = 3000(Min)@ IC= 1A ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC= 1A ·Incorporating a built-in zener diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Low-frequency amplifications.
·Power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 40-50 V VCEO Collector-Emitter Voltage 40-50 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2 A ICM Base Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 25 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1988 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA;
isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SD1988.
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