Datasheet Details
| Part number | 2SD2001 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 182.87 KB |
| Description | NPN Transistor |
| Download | 2SD2001 Download (PDF) |
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| Part number | 2SD2001 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 182.87 KB |
| Description | NPN Transistor |
| Download | 2SD2001 Download (PDF) |
|
|
|
·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V(Min.) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV receivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage-VBE=0 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.5 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 40 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.67 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER INCHANGE Semiconductor 2SD2001 CONDITIONS MIN TYP.
MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA;
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD2001.
| Part Number | Description |
|---|---|
| 2SD200 | NPN Transistor |
| 2SD2000 | NPN Transistor |
| 2SD201 | NPN Transistor |
| 2SD2012 | NPN Transistor |
| 2SD2014 | NPN Transistor |
| 2SD2015 | NPN Transistor |
| 2SD2016 | NPN Transistor |
| 2SD2017 | NPN Transistor |
| 2SD2020 | NPN Transistor |
| 2SD2021 | NPN Transistor |