Datasheet Details
| Part number | 2SD2051 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 189.64 KB |
| Description | NPN Transistor |
| Datasheet |
 2SD2051 Datasheet
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| Part number | 2SD2051 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 189.64 KB |
| Description | NPN Transistor |
| Datasheet |
2SD2051 Datasheet
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·High DC Current Gain : hFE= 4000(Min) @IC= 1A ·Low Collector Saturation Voltgae- : VCE(sat)= 1.5V(Max.)@ IC= 1A ·Incorporating a built-in zener diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For low-frequency amplification ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50-70 V VCEO Collector-Emitter Voltage 50-70 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.6 A ICP Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 2.5 A 2.0 W 12 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage V(BR)EBO Emitter-Base Breakdown Voltage IC=0.1mA;
IE= 0 IE= 3mA;
isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SD2051.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD2051 | Silicon NPN Transistor | Panasonic Semiconductor |
| Part Number | Description |
|---|---|
| 2SD2052 | NPN Transistor |
| 2SD2053 | NPN Transistor |
| 2SD2055 | NPN Transistor |
| 2SD2057 | NPN Transistor |
| 2SD2058 | NPN Transistor |
| 2SD2059 | NPN Transistor |
| 2SD200 | NPN Transistor |
| 2SD2000 | NPN Transistor |
| 2SD2001 | NPN Transistor |
| 2SD201 | NPN Transistor |