Datasheet Details
| Part number | 2SD2055 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 180.98 KB |
| Description | NPN Transistor |
| Download | 2SD2055 Download (PDF) |
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| Part number | 2SD2055 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 180.98 KB |
| Description | NPN Transistor |
| Download | 2SD2055 Download (PDF) |
|
|
|
·High DC Current Gain - : hFE =20(Min)@ IC= 4A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 80 VCEO Collector-Emitter Voltage 60 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 10 IB Base Current 6 PC Collector Power Dissipation @ TC=25℃ 40 TJ Junction Temperature 150 Tstg Storage Temperature Range -55~150 UNIT V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.39 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD2055 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ;IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A;
IB= 0.3A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 5A;
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD2055.
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| 2SD200 | NPN Transistor |
| 2SD2000 | NPN Transistor |
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| 2SD201 | NPN Transistor |