Datasheet Details
| Part number | 2SD2062 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 178.67 KB |
| Description | NPN Transistor |
| Datasheet |
 2SD2062 Datasheet
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| Part number | 2SD2062 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 178.67 KB |
| Description | NPN Transistor |
| Datasheet |
2SD2062 Datasheet
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Good Linearity of hFE ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD2062 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A;
IB= 0.4A VBE(sat) Base-Emitter Saturation Voltage IC= 4A;
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD2062.
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