Datasheet Details
| Part number | 2SD2066 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 195.82 KB |
| Description | NPN Transistor |
| Download | 2SD2066 Download (PDF) |
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| Part number | 2SD2066 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 195.82 KB |
| Description | NPN Transistor |
| Download | 2SD2066 Download (PDF) |
|
|
|
·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) ·Good Linearity of hFE ·High transition frequency(fT) ·Wide area of satety operation ·Complement to Type 2SB1373 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power amplifier and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 12 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 20 A 120 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD2066 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 8A;
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD2066.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD2066 | SILICON POWER TRANSISTOR | SavantIC |
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