Datasheet Details
| Part number | 2SD2091 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 185.83 KB |
| Description | NPN Transistor |
| Download | 2SD2091 Download (PDF) |
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| Part number | 2SD2091 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 185.83 KB |
| Description | NPN Transistor |
| Download | 2SD2091 Download (PDF) |
|
|
|
·High DC Current Gain- : hFE = 1000(Min)@ IC= 1A ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC= 1A ·Incorporating a built-in zener diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Low-frequency power amplifier amplifications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80-110 V VCEO Collector-Emitter Voltage 80-110 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 2 A ICM Base Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 20 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SD2091 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA;
isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SD2091.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD2091 | NPN Transistor | Rohm |
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