Datasheet Details
| Part number | 2SD2141 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 181.51 KB |
| Description | NPN Transistor |
| Datasheet |
 2SD2141 Datasheet
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| Part number | 2SD2141 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 181.51 KB |
| Description | NPN Transistor |
| Datasheet |
2SD2141 Datasheet
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·High DC Current Gain- : hFE = 1500(Min)@ IC= 3A ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC= 4A ·Incorporating a built-in zener diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in ignitor, driver for solenoid，motor and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Base Current-Peak IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 330-430 V 330-430 V 6 V 6 A 10 A 1 A 35 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SD2141 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA;
IB= 0 330 430 V V(BR)CBO Collector-Base Breakdown Voltage IC=0.1mA;
isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SD2141.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD2141 | Silicon NPN Transistor | Sanken electric |
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