DC Current Gain -hFE:1000(Min)@ IC= 1A
Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 60V(Min)
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for use in general purpose amplifier and switching
applications
ABSOLUTE
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isc Silicon NPN Power Transistors
DESCRIPTION ·DC Current Gain -hFE:1000(Min)@ IC= 1A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 60V(Min) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in general purpose amplifier and switching
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
2
A
ICM
Collector Current-Peak
3
A
IB
Base Current
Collector Power Dissipation
TC=25℃
PC
Collector Power Dissipation
Ta=25℃
Tj
Junction Temperature
2
A
50 W
2
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAM
2SD2143 Datasheet
