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2SD2156 Datasheet Preview

2SD2156 Datasheet

NPN Transistor

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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD2156
DESCRIPTION
·High DC Current gain
·Low Collector Saturation Voltage
: VCE(sat)= 1.0V(Max)@ IC= 2A
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V (Min)
·Good Linearity of hFE
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for power amplification
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
VCEO
VEBO
IC
ICM
IB
PC
TJ
Tstg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Collector Power Dissipation
@ TC=25
Collector Power Dissipation
@ Ta=25
Junction Temperature
Storage Temperature Range
80
V
60
V
6
V
3
A
6
A
1
A
25
W
2
150
-55~150
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

2SD2156 Datasheet Preview

2SD2156 Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD2156
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO
Collector-Emitter breakdown voltage IC=25mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.05A
ICBO
Collector Cutoff Current
ICEO
Collector Cutoff Current
VCB= 80V; IE= 0
VCE= 40V; IB= 0
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
hFE
DC Current Gain
IC= 0.5A; VCE= 4V
fT
Current-Gain—Bandwidth Product
IC= 0.2A; VCE= 12V,f= 10MHz
MIN TYP. MAX UNIT
60
V
1.0
V
100 μA
100 μA
100 μA
500
2500
50
MHz
hFE-Classifications
Q
P
O
500-1000 800-1500 1200-2500
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number 2SD2156
Description NPN Transistor
Maker INCHANGE
Total Page 2 Pages
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2SD2156 Datasheet PDF





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