Datasheet Details
| Part number | 2SD2232 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 183.14 KB |
| Description | NPN Transistor |
| Download | 2SD2232 Download (PDF) |
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| Part number | 2SD2232 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 183.14 KB |
| Description | NPN Transistor |
| Download | 2SD2232 Download (PDF) |
|
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·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·High DC Current Gain : hFE= 3000(Min) @ IC= 5A, VCE= 2V ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Igniter applications ·High voltage switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A ICP Collector Current-Pulse Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 12 A 2 W 30 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SD2232 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A;
IB= 10mA VBE(sat) Base-Emitter Saturation Voltage IC= 5A;
isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SD2232.
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