2SD2256 Description
hFE= 2000(Min.)@ IC= 12A, VCE= 4V ·High Collector-Emitter Breakdown Voltage: V(BR)CEO = 120V(Min) APPLICATIONS ·Designed for low frequency power amplifier applications. VCE= 4V 2000 20000 hFE-2 DC Current Gain IC= 25A.
- Part: 2SD2256
- Manufacturer: Inchange Semiconductor
- Size: 71.94 KB
Similar Part Number
| Manufacturer | Part Number | Description |
|---|---|---|
Hitachi Semiconductor |
2SD2256 | Silicon NPN Transistor |