Datasheet Details
| Part number | 2SD2293 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 200.63 KB |
| Description | NPN Transistor |
| Datasheet |
 2SD2293 Datasheet
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| Part number | 2SD2293 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 200.63 KB |
| Description | NPN Transistor |
| Datasheet |
2SD2293 Datasheet
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·High Breakdown Voltage : VCBO= 1500V(Min) ·High Switching Speed ·Built-in damper diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for color TV horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 6 A 50 W 150 ℃ Tstg Storage Temperature Range -55-150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD2293 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;
IE= 0 1500 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA;
RBE= ∞ 700 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 350mA;
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD2293.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD2293 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
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