Datasheet Details
| Part number | 2SD2328 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 197.49 KB |
| Description | NPN Transistor |
| Download | 2SD2328 Download (PDF) |
|
|
| Part number | 2SD2328 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 197.49 KB |
| Description | NPN Transistor |
| Download | 2SD2328 Download (PDF) |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 3.0V(Max)@ IC= 10A, IB= 1A ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 180 V VEBO Emitter-Base voltage 5 V IC Collector Current-Continuous 15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1.5 A 150 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD2328 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 10A;
IB= 1A VBE(on) Base-Emitter On Voltage IC= 8A ;
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD2328.
| Part Number | Description |
|---|---|
| 2SD2300 | NPN Transistor |
| 2SD2331 | NPN Transistor |
| 2SD2333 | NPN Transistor |
| 2SD2335 | NPN Transistor |
| 2SD234 | NPN Transistor |
| 2SD2340 | NPN Transistor |
| 2SD2348 | NPN Transistor |
| 2SD2349 | NPN Transistor |
| 2SD235 | NPN Transistor |
| 2SD237 | NPN Transistor |