Datasheet Details
| Part number | 2SD2331 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 185.66 KB |
| Description | NPN Transistor |
| Download | 2SD2331 Download (PDF) |
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| Part number | 2SD2331 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 185.66 KB |
| Description | NPN Transistor |
| Download | 2SD2331 Download (PDF) |
|
|
|
·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 3 A IB Base Current- Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 2 A 60 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD2331 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC=1mA;
IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 200mA;
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD2331.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD2331 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
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| 2SD2348 | NPN Transistor |
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| 2SD235 | NPN Transistor |
| 2SD237 | NPN Transistor |