Datasheet Details
| Part number | 2SD2335 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 186.08 KB |
| Description | NPN Transistor |
| Download | 2SD2335 Download (PDF) |
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| Part number | 2SD2335 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 186.08 KB |
| Description | NPN Transistor |
| Download | 2SD2335 Download (PDF) |
|
|
|
·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 7 A IB Base Current- Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 100 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD2335 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)EBO Emitter-Base Breakdown Voltage IE= 200mA ;
IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A;
IB= 1A VBE(sat) Base-Emitter Saturation Voltage IC=.5A;
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD2335.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD2335 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
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| 2SD234 | NPN Transistor |
| 2SD2340 | NPN Transistor |
| 2SD2348 | NPN Transistor |
| 2SD2349 | NPN Transistor |
| 2SD235 | NPN Transistor |
| 2SD237 | NPN Transistor |