Datasheet Details
| Part number | 2SD2340 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 188.11 KB |
| Description | NPN Transistor |
| Download | 2SD2340 Download (PDF) |
|
|
| Part number | 2SD2340 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 188.11 KB |
| Description | NPN Transistor |
| Download | 2SD2340 Download (PDF) |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 110V(Min) ·High DC Current Gain : hFE= 5000(Min) @IC= 3A ·Low Collector Saturation Voltgae- : VCE(sat)= 2.5V(Max.)@ IC= 5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio，regulator and general purpose.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 130 V VCEO Collector-Emitter Voltage 110 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A ICP Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 10 A 2.5 W 50 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SD2340 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;
isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SD2340.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD2340 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SD234 | NPN Transistor |
| 2SD2348 | NPN Transistor |
| 2SD2349 | NPN Transistor |
| 2SD2300 | NPN Transistor |
| 2SD2328 | NPN Transistor |
| 2SD2331 | NPN Transistor |
| 2SD2333 | NPN Transistor |
| 2SD2335 | NPN Transistor |
| 2SD235 | NPN Transistor |
| 2SD237 | NPN Transistor |