Datasheet Details
| Part number | 2SD2348 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 202.99 KB |
| Description | NPN Transistor |
| Datasheet |
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| Part number | 2SD2348 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 202.99 KB |
| Description | NPN Transistor |
| Datasheet |
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·High Breakdown Voltage- : VCBO= 1500V (Min) ·Low Saturation Voltage ·High Switching Speed ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 8 A ICM Collector Current-Peak 16 A IB Base Current- Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD2348 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 300mA ;
IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 6A;
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD2348.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SD2348 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SD234 | NPN Transistor |
| 2SD2340 | NPN Transistor |
| 2SD2349 | NPN Transistor |
| 2SD2300 | NPN Transistor |
| 2SD2328 | NPN Transistor |
| 2SD2331 | NPN Transistor |
| 2SD2333 | NPN Transistor |
| 2SD2335 | NPN Transistor |
| 2SD235 | NPN Transistor |
| 2SD237 | NPN Transistor |