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2SD2396 Datasheet Preview

2SD2396 Datasheet

NPN Transistor

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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD2396
DESCRIPTION
·Low Collector Saturation Voltage
·High DC current gain
·Large collector power dissipation
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for low frequency power amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-Pulse
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
6
A
30
W
150
Tstg
Storage Temperature Range
-55~150
isc Websitewww.iscsemi.cn
1
isc & iscsemi is registered trademark




INCHANGE

2SD2396 Datasheet Preview

2SD2396 Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD2396
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0
VCE(sat) * Collector-Emitter Saturation Voltage IC= 2A; IB= 0.05A
VBE(sat)* Base-Emitter Saturation Voltage
IC= 2A; IB= 0.05A
ICBO
Collector Cutoff Current
VCB= 60V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
hFE*
DC Current Gain
IC= 0.5A ; VCE= 4V
fT
Current-Gain—Bandwidth Product
IE= 0.2A ; VCE= 5V
COB
Output Capacitance
*:Single pulse test
hFE Classification
Class
H
J
IE= 0 ; VCB= 10V;ftest= 1.0MHz
K
hFE
400-800 600-1200 1K-2K
MIN TYP. MAX UNIT
60
V
0.8
V
1.5
V
1
μA
1
μA
400
2K
40
MHz
55
pF
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc Websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark



Part Number 2SD2396
Description NPN Transistor
Maker INCHANGE
Total Page 2 Pages
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