Datasheet Details
| Part number | 2SD2398 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 181.07 KB |
| Description | NPN Transistor |
| Download | 2SD2398 Download (PDF) |
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| Part number | 2SD2398 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 181.07 KB |
| Description | NPN Transistor |
| Download | 2SD2398 Download (PDF) |
|
|
|
·Collector-Emitter Breakdown Voltage: V(BR)CEO= 100V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= 1A ·Low Collector Saturation Voltgae: VCE(sat)= 1.5V(Max.)@ IC= 1A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Motor，Relay drive ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 2 A ICP Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 2.0 W 20 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SD2398 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA;
IB= 0 100 V V(BR)CBO Collector-Base Breakdown Voltage IC=50uA;
isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SD2398.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD2398 | Power Transistor | Rohm |
| Part Number | Description |
|---|---|
| 2SD2390 | NPN Transistor |
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| 2SD2399 | NPN Transistor |
| 2SD2300 | NPN Transistor |
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