2SD2398 Description
·Collector-Emitter Breakdown Voltage: V(BR)CEO= 100V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= 1A ·Low Collector Saturation Voltgae:.
2SD2398 is NPN Transistor manufactured by Inchange Semiconductor .
·Collector-Emitter Breakdown Voltage: V(BR)CEO= 100V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= 1A ·Low Collector Saturation Voltgae:.