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2SD2439 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Darlington Power Transistor.

General Description

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·High DC Current Gain- : hFE= 5000( Min.) @(IC= 7A, VCE= 4V) ·Low Collector Saturation Voltage- : VCE(sat)= 2.5V(Max)@ (IC= 7A, IB= 7mA) ·Complement to Type 2SB1588 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio, series regulator and general purpose applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 1 A 80 W 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SD2439 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ;

IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 7A;