2SD2490 NPN Transistor

INCHANGE

Description

isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SD2490 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min). High DC current gain : hFE= 1000(Min) @IC= 1A. Low Collector Saturation Voltg.

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Datasheet Specifications

Part number: 2SD2490
Manufacturer: INCHANGE
File Size: 193.80 KB
Datasheet: 2SD2490-INCHANGE.pdf
Description: NPN Transistor

Applications

* Audio ,regulator and general purpose Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A IB Base Current-Continuous PC Colle

2SD2490 Distributors

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2SD2490 NPN Transistor INCHANGE

INCHANGE 2SD2490-like datasheet