Datasheet Details
| Part number | 2SD2490 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 193.80 KB |
| Description | NPN Transistor |
| Datasheet |
 2SD2490 Datasheet
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| Part number | 2SD2490 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 193.80 KB |
| Description | NPN Transistor |
| Datasheet |
2SD2490 Datasheet
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) ·High DC current gain : hFE= 1000(Min) @IC= 1A ·Low Collector Saturation Voltgae- : VCE(sat)= 1.5V(Max.)@ IC= 1A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio ,regulator and general purpose Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 85 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SD2490 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=30mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=10A ;IB=10mA VBEsat Base-emitter saturation voltage IC=10A ;IB=10mA ICBO Collector cut-off current VCB=200V IE=0 IEBO Emitter cut-off current VEB=5V;
IC=0 hFE DC current gain IC=10A ;
VCE=4V Cob Output capacitance IE=0 ;
isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SD2490.
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| 2SD2400 | NPN Transistor |
| 2SD2401 | NPN Transistor |
| 2SD2406 | NPN Transistor |
| 2SD2438 | NPN Transistor |
| 2SD2439 | NPN Transistor |