2SD2490 Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) ·High DC current gain : hFE= 1000(Min) @IC= 1A ·Low Collector Saturation Voltgae-.
2SD2490 is NPN Transistor manufactured by Inchange Semiconductor .
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) ·High DC current gain : hFE= 1000(Min) @IC= 1A ·Low Collector Saturation Voltgae-.