Datasheet Details
| Part number | 2SD2500 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.92 KB |
| Description | NPN Transistor |
| Download | 2SD2500 Download (PDF) |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SD2500 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.92 KB |
| Description | NPN Transistor |
| Download | 2SD2500 Download (PDF) |
|
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·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Color TV horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 10 A ICP Collector Current- Pulse 20 A IB Base Current- Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 5 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD2500 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 6A;
IB= 1.5A VBE(sat) Base-Emitter Saturation Voltage IC= 6A;
IB= 1.5A ICBO Collector Cutoff Current VCB= 1500V ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SD2500 | Silicon NPN Transistor | Toshiba Semiconductor |
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2SD2500 | SILICON POWER TRANSISTOR | SavantIC |
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| 2SD2557 | NPN Transistor |
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| 2SD2559 | NPN Transistor |
| 2SD256 | Silicon NPN Power Transistor |