Datasheet Details
| Part number | 2SD2549 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.44 KB |
| Description | NPN Transistor |
| Download | 2SD2549 Download (PDF) |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SD2549 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.44 KB |
| Description | NPN Transistor |
| Download | 2SD2549 Download (PDF) |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Low Collector Saturation Voltgae- : VCE(sat)= 0.7V(Max.)@ IC= 3A ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak Collector Power Dissipation @TC=25℃ PC Collector Power Dissipation @Ta=25℃ TJ Junction Temperature 5 A 20 W 2 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SD2549 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD2549 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD2549 | Silicon NPN Transistor | Panasonic Semiconductor |
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|---|---|
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