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2SD2557 - NPN Transistor

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Part number 2SD2557
Manufacturer INCHANGE
File Size 210.52 KB
Description NPN Transistor
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High DC Current Gain : hFE= 1500(Min.)@ IC= 1A, VCE= 5V Collector-Emitter Breakdown Voltage- : V(BR)CEO = 200V(Min) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for series regulator and general purpose applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Conti

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