Datasheet Details
| Part number | 2SD2557 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.52 KB |
| Description | NPN Transistor |
| Download | 2SD2557 Download (PDF) |
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Overview: isc Silicon NPN Darlington Power Transistor.
| Part number | 2SD2557 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.52 KB |
| Description | NPN Transistor |
| Download | 2SD2557 Download (PDF) |
|
|
|
·High DC Current Gain : hFE= 1500(Min.)@ IC= 1A, VCE= 5V ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 200V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for series regulator and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 5 A IB Base Current- Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 2 A 70 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD2557 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor 2SD2557 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA, IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1A ,IB= 5mA ICBO Collector Cutoff current VCB= 200V, IE= 0 IEBO Emitter Cutoff current VEB= 6V, IC= 0 hFE DC Current Gain IC= 1A;
VCE= 5V COB Output Capacitance fT Current-Gain—Bandwidth Product IE= 0;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SD2557 | Silicon NPN Transistor | Sanken electric |
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2SD2557 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
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| 2SD2500 | NPN Transistor |
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| 2SD256 | Silicon NPN Power Transistor |