2SD2558 Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) ·High DC Current Gain- : hFE= 1500( Min.) @(IC= 1A, VCE= 5V) ·Low Collector Saturation Voltage-.
2SD2558 is NPN Transistor manufactured by Inchange Semiconductor .
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) ·High DC Current Gain- : hFE= 1500( Min.) @(IC= 1A, VCE= 5V) ·Low Collector Saturation Voltage-.