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2SD2558 - NPN Transistor

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Part number 2SD2558
Manufacturer INCHANGE
File Size 212.59 KB
Description NPN Transistor
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Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) High DC Current Gain- : hFE= 1500( Min.) @(IC= 1A, VCE= 5V) Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max)@ (IC= 1A, IB= 5mA) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for series regulator and general purpose applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-

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