2SD2558 transistor equivalent, npn transistor.
*Designed for series regulator and general purpose
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETE.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 200V(Min)
*High DC Current Gain-
: hFE= 1500( Min.) @(IC= 1A, VCE= 5V)
*Low Collector Saturation Voltage-
: VCE(sat)= 1.5V(Max)@ (IC= 1A, IB= 5mA)
*Minimum Lot-to-Lot variations for ro.
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