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2SD2560 - NPN Transistor

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Part number 2SD2560
Manufacturer INCHANGE
File Size 212.24 KB
Description NPN Transistor
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Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) High DC Current Gain- : hFE= 5000( Min.) @(IC= 10A, VCE= 4V) Low Collector Saturation Voltage- : VCE(sat)= 2.5V(Max)@ (IC= 10A, IB= 10mA) Complement to Type 2SB1647 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio, series regulator and general purpose applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collec

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